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STS1HNK60 The STMicroelectronics STS1HNK60 is a dual N-channel MOSFET designed for medium-power switching applications. It offers a high voltage tolerance of 450V and is housed in a surface-mountable 8-SOIC package.
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STS1HNK60

Available from 4 distributors
Mfr Name: ST
ST
The STMicroelectronics STS1HNK60 is a dual N-channel MOSFET designed for medium-power switching applications. It offers a high voltage tolerance of 450V and is housed in a surface-mountable 8-SOIC package.
✓ Total Stock: 294,226 pcs
$ Price Range: $0.99

STS1HNK60 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
258,286 pcs
On Request
258286 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
32,000 pcs
On Request
32000 pcs On Request 1 On Request On Request 04+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
1,970 pcs
On Request
1970 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,970 pcs
On Request
1970 pcs On Request 1 On Request On Request 0532+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS1HNK60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Failure Rate
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Technology
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STS1HNK60 Description

Short technical summary and product information.

The STMicroelectronics STS1HNK60 is a dual N-channel MOSFET belonging to the SuperMESH™ series. It is engineered for medium-power switching applications, providing a high breakdown voltage of 450V and a continuous drain current of 400mA at 25°C.

 

Key electrical characteristics include a maximum on-resistance of 4.5 Ohms at 500mA and 10V, a gate threshold voltage of 3.7V at 250µA, and a maximum gate charge of 10nC at 10V. The input capacitance is rated at 160pF at 25V. The device supports a maximum power dissipation of 1.6W and can operate at junction temperatures up to 150°C.

 

This MOSFET features a dual N-channel configuration within a single 8-SOIC package, suitable for surface mounting. Its design prioritizes efficient high-speed switching, low gate charge, and low input capacitance, making it suitable for compact and power-sensitive designs. The SuperMESH™ technology contributes to robust performance in demanding applications.

STS1HNK60 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STMicroelectronics STS1HNK60 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

STS1HNK60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS1HNK60 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS1HNK60 Features

  • Dual N-channel MOSFET configuration.
  • High 450V drain-to-source voltage.
  • Low 4.5 Ohm maximum on-resistance.
  • Surface mount 8-SOIC package.
  • 150°C maximum operating temperature.

STS1HNK60 Applications

  • Suitable for high-voltage switching applications.
  • Used in power supply and inverter circuits.
  • Ideal for compact, high-temperature environments.
  • Applicable in load control for industrial equipment.
  • Suitable for low-power, high-speed switching designs.

STS1HNK60 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STS1HNK60?

The maximum drain-to-source voltage (Vdss) for the STS1HNK60 is 450V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 400mA.

What is the maximum on-resistance of the STS1HNK60?

The maximum on-resistance (Rds On) is 4.5 Ohms when measured at 500mA drain current and 10V gate-source voltage.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 3.7V at a drain current of 250µA.

What is the maximum operating temperature for this MOSFET?

The STS1HNK60 can operate at junction temperatures up to 150°C.

What package type is the STS1HNK60 supplied in?

The STS1HNK60 is supplied in an 8-SOIC package suitable for surface mounting.

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