STS1DNC45 The STMicroelectronics STS1DNC45 is a dual N-channel MOSFET designed for medium-power switching applications. It features a high voltage tolerance of 450V and a continuous drain current of 400mA.
Mfr Part #:

STS1DNC45

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS1DNC45 is a dual N-channel MOSFET designed for medium-power switching applications. It features a high voltage tolerance of 450V and a continuous drain current of 400mA.
✓ Total Stock: 77,322 pcs
$ Price Range: $1.64

STS1DNC45 Available from 4 distributors

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60,000 pcs
60000 pcs On Request 1 On Request On Request 11+ On Request On Request
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9,268 pcs
9268 pcs On Request 1 On Request On Request 21+ On Request On Request
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6,358 pcs
6358 pcs On Request 1 On Request On Request On Request On Request On Request
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1,696 pcs
1696 pcs On Request 1 On Request On Request On Request On Request On Request

STS1DNC45 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

STS1DNC45 Description

Short technical summary and product information.

The STMicroelectronics STS1DNC45 is a dual N-channel MOSFET belonging to the SuperMESH™ series. It is engineered for medium-power switching applications, offering a high voltage tolerance of up to 450V and a continuous drain current of 400mA at 25°C. This MOSFET supports a maximum power dissipation of 1.6W and operates at junction temperatures up to 150°C.

 

Key electrical characteristics include a maximum on-resistance of 4.5 Ohms at 500mA and 10V, a gate threshold voltage of 3.7V at 250µA, a maximum gate charge of 10nC at 10V, and a maximum input capacitance of 160pF at 25V. The device is housed in a compact 8-SOIC package suitable for surface mounting.

 

Its dual N-channel structure integrated into a single package allows for flexible low-power switching and load control. The design maximizes thermal efficiency and minimizes parasitic elements, contributing to reliable high-speed switching and overall system efficiency. The STS1DNC45 is suitable for compact, power-sensitive designs requiring robust performance in demanding applications.

STS1DNC45 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STS1DNC45 Dual N-Channel MOSFET
Subcategory: FETs, MOSFETs - Arrays

STS1DNC45 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS1DNC45 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS1DNC45 Features

  • Dual N-channel MOSFET configuration.
  • High 450V drain-to-source voltage.
  • 400mA continuous drain current.
  • Low 4.5 Ohm maximum on-resistance.
  • Compact 8-SOIC surface mount package.

STS1DNC45 Applications

  • Suitable for low-power DC-DC converters.
  • Used in load switching and relay drivers.
  • Ideal for logic-level gate drive circuits.
  • Applicable in battery management systems.

STS1DNC45 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the STS1DNC45?

450V.

What is the continuous drain current at 25°C?

400mA.

What is the maximum on-resistance?

4.5 Ohm at 500mA drain current and 10V gate-source voltage.

What is the gate threshold voltage?

3.7V maximum at 250µA drain current.

What is the package type?

8-SOIC surface-mount package.

What is the maximum operating junction temperature?

150°C.

What is the maximum power dissipation?

1.6W.

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