| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,007 pcs
|
29007 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS19N3LLH6 is an N-channel Power MOSFET utilizing ST's proprietary STripFET™ VI technology with a DeepGATE™ structure. This device is designed for switching applications and offers an extremely low on-resistance.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 19A at 25°C. The static drain-source on-resistance (Rds(on)) is as low as 5.6mΩ at 9.5A and 10V gate-source voltage. The input capacitance (Ciss) is 1690 pF at 25V, and the gate charge (Qg) is a maximum of 17nC at 15V.
This MOSFET is housed in an 8-SOIC package suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.7W at 25°C ambient temperature. The device is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V minimum. The gate-source voltage is ±20 V maximum.
The STS19N3LLH6 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -55°C to 150°C, and the storage temperature range is also -55°C to 150°C.
The maximum continuous drain current is 19 A at Tc=25°C.
The typical on-resistance is 4.9 mΩ at VGS=10V, ID=9.5A, and maximum 5.6 mΩ at same conditions.
The maximum gate charge is 17 nC at VGS=15V.
The maximum power dissipation is 2.7 W at Tamb=25°C.