| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,053 pcs
|
2053 pcs | On Request | 1 | On Request | On Request | 0839+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS17NH3LL is a single N-Channel MOSFET belonging to the SuperMESH™ series, designed for medium-power switching applications. It offers a high voltage tolerance with a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current of 17A at 25°C (Tc). The MOSFET has a low Rds On of 4.5 Ohm at 500mA, 10V, and a gate threshold voltage of 1V at 250µA.
This device is housed in a compact 8-SOIC package suitable for surface mounting. It features a maximum power dissipation of 1.6W and an operating junction temperature range of -55°C to 150°C. The STS17NH3LL is built using Metal Oxide Silicon Field Effect Transistor (MOSFET) technology, providing efficient switching characteristics with a gate charge of 10nC and input capacitance of 160pF.
Its robust design and specifications make it suitable for various power management and switching circuits where space and efficiency are critical. The surface mount package facilitates integration into compact PCBs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
17A.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
150°C.
1V maximum at 250µA drain current.
4.5 Ohm at 500mA drain current and 10V gate drive.