| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,974 pcs
|
28974 pcs | On Request | 1 | On Request | On Request | 1438+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS12N3LLH5 is an N-channel Power MOSFET utilizing STMicroelectronics’ STripFET™V technology. This device is optimized for very low on-state resistance, achieving an industry benchmark FOM. It features a drain-source voltage of 30V and a maximum continuous drain current of 12A at 25°C case temperature.
Key electrical characteristics include an extremely low on-resistance (RDS(on)) of 7.5mOhm at 6A and 10V Vgs, and a low gate charge (Qg) of 8 nC at 4.5V Vgs. The MOSFET operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 2.7W at 25°C case temperature.
The STS12N3LLH5 is supplied in an 8-pin SOIC package suitable for surface mounting. Its design is well-suited for various switching applications where high efficiency and low power loss are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
12 A at 25°C case temperature.
7.5 mOhm maximum at 6A and 10V gate drive.
-55°C to 150°C.
8-SOIC surface-mount package.
1 V minimum at 250 µA drain current.
8 nC at 4.5 V gate voltage.