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STS11NF30L The STMicroelectronics STS11NF30L is an N-Channel Power MOSFET designed for high efficiency DC/DC converters. It features a 30V drain-source voltage and 11A continuous current capability.
Mfr Part #:

STS11NF30L

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS11NF30L is an N-Channel Power MOSFET designed for high efficiency DC/DC converters. It features a 30V drain-source voltage and 11A continuous current capability.
✓ Total Stock: 559 pcs
$ Price Range: $2.56

STS11NF30L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
559 pcs
On Request
559 pcs On Request 1 On Request On Request 05+ On Request On Request
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STS11NF30L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STS11NF30L Description

Short technical summary and product information.

The STMicroelectronics STS11NF30L is an N-Channel Power MOSFET utilizing the StripFET™ process for high packing density and low on-resistance. It is specifically designed for high efficiency CPU core DC/DC converters and automotive applications.

 

Key electrical specifications include a 30V drain-source breakdown voltage and a continuous drain current of 11A at 25°C case temperature, reducing to 7A at 100°C. The typical static drain-source on-resistance is as low as 10.5mOhm at 5.5A and 10V Vgs. The device features a low gate charge of 22.5 nC typical at 5V Vgs, contributing to optimal RDS(on) x Qg trade-offs and reduced conduction losses.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C case temperature. It is housed in an 8-SOIC package and supports surface mount technology.

 

The STS11NF30L offers a gate-source voltage range of ±18V and a gate threshold voltage of 1V typical at 250µA. Its input capacitance is 1440 pF typical at 25V Vds and 1MHz frequency.

STS11NF30L Quick Information

Product Type: Power MOSFET
Canonical Name: STS11NF30L N-Channel 30V 11A SO-8 Power MOSFET
Subcategory: N-Channel

STS11NF30L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS11NF30L Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS11NF30L Features

  • N-Channel 30V Power MOSFET
  • Low 10.5mOhm Rds(on) at 10V Vgs
  • High 11A continuous drain current
  • Low gate charge of 22.5 nC
  • 8-SOIC surface mount package

STS11NF30L Applications

  • Designed for CPU core DC/DC converters
  • Suitable for automotive applications
  • High efficiency power switching
  • Low conduction loss designs

STS11NF30L FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STS11NF30L?

30V.

What is the continuous drain current rating?

11A at 25°C case temperature, 7A at 100°C.

What is the package type?

8-SOIC surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the typical on-resistance at 10V gate drive?

10.5 mOhm maximum.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

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