| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS10P3LLH6 is a P-Channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current capability of 10A. It features a low on-state resistance of 12mOhm at 5A and 10V Vgs, and a gate threshold voltage of 1V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C and has an input capacitance of 3350pF at 25V. The maximum power dissipation is 2.7W at 25°C ambient temperature.
Packaged in an 8-SOIC surface mount configuration, the STS10P3LLH6 is suitable for various power management and switching applications. Its P-Channel enhancement mode technology ensures efficient operation.
Key electrical characteristics include a gate charge of 33nC at 4.5V Vgs and a maximum gate-to-source voltage of ±20V. The device is designed for reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width), surface mount.
-55°C to 150°C (junction).
10A at 25°C ambient.
12mOhm at 5A drain current and 10V gate-source voltage.
1V maximum at 250µA drain current.
33nC at 4.5V gate-source voltage.