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STS10DN3LH5 The ST STS10DN3LH5 is a dual N-channel Power MOSFET designed for switching applications. It features a 30V drain-source voltage and a low on-resistance.
Mfr Part #:

STS10DN3LH5

Available from 2 distributors
Mfr Name: ST
ST
The ST STS10DN3LH5 is a dual N-channel Power MOSFET designed for switching applications. It features a 30V drain-source voltage and a low on-resistance.
✓ Total Stock: 72,380 pcs
$ Price Range: $1.64

STS10DN3LH5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
72,320 pcs
On Request
72320 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
60 pcs
On Request
60 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS10DN3LH5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
SVHC Present
Storage Temperature
Tape & Reel
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STS10DN3LH5 Description

Short technical summary and product information.

The STMicroelectronics STS10DN3LH5 is a dual N-channel Power MOSFET utilizing STripFET™ V technology. This technology is optimized for very low on-state resistance and excellent figure of merit (FOM).

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 10A at 25°C. The static drain-source on-resistance (RDS(on)) is as low as 0.019 Ω typical at VGS = 10V and ID = 5A, and 0.023 Ω typical at VGS = 4.5V and ID = 5A. It also offers a low gate threshold voltage of 1V.

 

This MOSFET is suitable for various switching applications. It comes in an SO-8 package and is supplied on tape and reel for automated assembly processes.

 

Absolute maximum ratings include a pulsed drain current (Idm) of 40A, total power dissipation (Ptot) of 2.5W at 25°C, and a single pulse avalanche energy (EAS) of 50mJ. The operating and storage temperature range is -55°C to 150°C.

STS10DN3LH5 Quick Information

Product Type: Power MOSFET
Series: STripFET
Canonical Name: Dual N-channel Power MOSFET
Subcategory: Power MOSFET

STS10DN3LH5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS10DN3LH5 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS10DN3LH5 Features

  • 30V drain-source voltage rating.
  • Extremely low on-resistance.
  • 10A continuous drain current.
  • SO-8 package for surface mounting.
  • Suitable for switching applications.

STS10DN3LH5 Applications

  • Ideal for high-efficiency switching.
  • Used in power management circuits.
  • Suitable for DC-DC converters.
  • Applicable in load switching.

STS10DN3LH5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STS10DN3LH5?

The maximum drain-source voltage (Vds) is 30V.

What is the continuous drain current of the STS10DN3LH5 at 25°C?

The continuous drain current (Id) is 10A at 25°C.

What is the typical static drain-source on-resistance (RDS(on)) for the STS10DN3LH5?

The typical static drain-source on-resistance (RDS(on)) is 0.019 Ω at VGS = 10V and ID = 5A.

What package type is the STS10DN3LH5 available in?

The STS10DN3LH5 is available in an SO-8 package.

What is the operating temperature range for the STS10DN3LH5?

The operating junction temperature range is -55°C to 150°C.

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