| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STS10DN3LH5 is a dual N-channel Power MOSFET designed using STripFET™ V technology. This technology is optimized for very low on-state resistance and excellent figure of merit (FOM).
Key electrical characteristics include a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 10A at 25°C case temperature, and 7A at 100°C. The static drain-source on-resistance (Rds(on)) is as low as 0.019 Ω typical at 5A and 10V gate-source voltage, with a maximum of 0.021 Ω. The gate threshold voltage (Vgs(th)) is 1V at 250µA, and the input capacitance (Ciss) is 475pF at 25V.
This MOSFET features a logic level gate, making it suitable for lower gate drive voltages. It has a maximum power dissipation of 2.5W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C.
The STS10DN3LH5 comes in an 8-SOIC package and is designed for surface mount applications. It is supplied on tape and reel, suitable for automated assembly processes. Its ruggedness and low on-resistance make it suitable for various switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
It is available in an 8-SOIC surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 10A at 25°C case temperature and 7A at 100°C.
The gate threshold voltage is 1V nominal (tested at ID=250µA).
The maximum on-resistance is 0.021Ω at VGS=10V and 0.028Ω at VGS=4.5V.
The maximum input capacitance is 475pF at VDS=25V.