| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STR2P3LLH6 is a P-Channel enhancement-mode MOSFET from STMicroelectronics. It has a maximum drain-source voltage of 30V and a continuous drain current rating of 2A. The device features a low on-resistance of 56mOhm at 10V gate drive, which helps minimize conduction losses. Gate threshold voltage is 2.5V maximum, allowing logic-level drive. Input capacitance is 639pF and gate charge is 6nC, enabling moderate switching speeds. Maximum power dissipation is 350mW. The device is housed in a surface-mount SOT-23 package (also listed as TO-236-3 and SC-59). Operating junction temperature range is up to 150°C. This MOSFET is suitable for low-voltage load switching and power management applications in compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-236-3, SC-59, SOT-23-3.
150°C.
4.5V and 10V.
P-Channel.