Mfr Part #:

STR1P2UH7

The STMicroelectronics STR1P2UH7 is a P-channel Power MOSFET designed for switching applications. It features a 20V drain-source voltage and a continuous drain current of 1.4A.

✓ Total Stock: 6,251 pcs

$ Price Range: $2.56

STR1P2UH7 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,251 pcs On Request	6251 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STR1P2UH7 Description

Short technical summary and product information.

The STMicroelectronics STR1P2UH7 is a P-channel Power MOSFET utilizing STripFET™ H7 technology with a trench gate structure. This device offers very low on-resistance and ultra-low capacitances, making it suitable for higher switching frequency operations.

Key electrical characteristics include a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 1.4A at 25°C. The static drain-source on-resistance (RDS(on)) is a maximum of 0.1 Ohm at 700mA and 4.5V gate-source voltage. The gate threshold voltage (VGS(th)) is a maximum of 1V at 250µA.

This MOSFET is housed in a compact SOT-23-3 surface mount package, ideal for space-constrained designs. The operating temperature range is up to 150°C (TJ). Its features like high avalanche ruggedness and low gate charge contribute to reliable performance in demanding applications.

Applications for the STR1P2UH7 include general switching applications where efficient power management is critical. The P-channel configuration and specific electrical parameters make it a versatile component for various electronic circuits.

STR1P2UH7 Quick Information

Product Type: Power MOSFET

Series: STripFET™ H7

Canonical Name: STR1P2UH7 P-channel 20V Power MOSFET

Subcategory: P-Channel

STR1P2UH7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STR1P2UH7 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STR1P2UH7 Features

P-channel 20V Power MOSFET.
Very low on-resistance.
Ultra-low capacitance and gate charge.
Compact SOT-23-3 surface mount package.
High avalanche ruggedness.

STR1P2UH7 Applications

Suitable for switching applications.
Ideal for higher switching frequencies.
Used in power management circuits.
Compact designs requiring small footprint.

STR1P2UH7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

20V maximum.

What package is the STR1P2UH7 available in?

SOT-23-3 (TO-236-3, SC-59) surface-mount package.

What is the maximum operating junction temperature?

150°C.

What is the gate threshold voltage?

Maximum 1V at ID=250µA.

What is the on-resistance at 4.5V gate drive?

Maximum 100mΩ at ID=0.7A, VGS=4.5V.

What is the continuous drain current rating?

1.4A at 25°C, 0.9A at 100°C.

What is the gate charge?

Maximum 4.8nC at VGS=4.5V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	1.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	350mW (Tc)
Rds On (Max) @ Id, Vgs	0.1 Ω
SVHC Present	Not Present
Supplier Device Package	SOT-23-3
Supplier Package	SOT-23-3
Tape & Reel	Tape and reel
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA