| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 1632+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STQ2HNK60ZR-AP is an N-Channel MOSFET designed for various electronic applications. It offers a high drain-to-source voltage rating of 600V and a continuous drain current of 500mA at 25°C.
The MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and operates with a gate drive voltage of 10V. Key electrical characteristics include a maximum on-resistance of 4.8 Ohms at 1A and 10V, a gate threshold voltage of 4.5V at 50µA, and a maximum gate charge of 15 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 280 pF at 25V.
Designed for through-hole mounting, the component comes in a TO-92-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3W (Tc). The SuperMESH™ series designation indicates its specific technology family.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes are based on available database information and should be reviewed for specific application requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600 V.
The continuous drain current (Id) at 25°C is 500 mA.
The maximum power dissipation is 3 W.
The maximum on-resistance (Rds On) at 1A and 10V is 4.8 Ohm.
The gate threshold voltage (Vgs(th)) is 4.5V at 50µA.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET.