STQ1NK80ZR-AP The STMicroelectronics STQ1NK80ZR-AP is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-source voltage and 300mA continuous drain current.
Mfr Part #:

STQ1NK80ZR-AP

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STQ1NK80ZR-AP is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-source voltage and 300mA continuous drain current.
✓ Total Stock: 37,020 pcs
$ Price Range: $2.56

STQ1NK80ZR-AP Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,020 pcs
33020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

STQ1NK80ZR-AP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STQ1NK80ZR-AP Description

Short technical summary and product information.

The STMicroelectronics STQ1NK80ZR-AP is a single N-Channel MOSFET from the Transistors - FETs, MOSFETs - Single category. It is designed for through-hole mounting and comes in a TO-92-3 package. This MOSFET boasts a high drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 300mA at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 16 Ohms at 500mA and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, with a maximum gate-to-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is rated at 160 pF at 25V, and gate charge (Qg) is 7.7 nC at 10V.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3W (Tc). It is constructed using MOSFET (Metal Oxide) technology. The component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.

STQ1NK80ZR-AP Quick Information

Product Type: MOSFET Transistor
Canonical Name: STMicroelectronics STQ1NK80ZR-AP N-Channel MOSFET
Subcategory: N-Channel

STQ1NK80ZR-AP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STQ1NK80ZR-AP Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STQ1NK80ZR-AP Features

  • 800V drain-source voltage rating.
  • 300mA continuous drain current.
  • 16 Ohm maximum Rds On.
  • Through-hole mounting package.
  • RoHS3 compliant.

STQ1NK80ZR-AP Applications

  • Suitable for high voltage switching.
  • Used in power control circuits.
  • General purpose MOSFET applications.
  • Designed for through-hole assembly.

STQ1NK80ZR-AP FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STQ1NK80ZR-AP?

The maximum drain-to-source voltage (Vdss) is 800 V.

What is the continuous drain current of the STQ1NK80ZR-AP?

The continuous drain current is 300mA (Tc).

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STQ1NK80ZR-AP supplied in?

It is supplied in a TO-226-3, TO-92-3 (TO-226AA) Formed Leads package.

Is the STQ1NK80ZR-AP RoHS compliant?

Yes, it is RoHS3 compliant.

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