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STQ1NK60ZR-AP The STMicroelectronics STQ1NK60ZR-AP is an N-Channel MOSFET with a 600V drain-source voltage and 300mA continuous drain current. It is housed in a TO-92-3 package.
Mfr Part #:

STQ1NK60ZR-AP

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STQ1NK60ZR-AP is an N-Channel MOSFET with a 600V drain-source voltage and 300mA continuous drain current. It is housed in a TO-92-3 package.
✓ Total Stock: 15,074 pcs
$ Price Range: $2.56

STQ1NK60ZR-AP Available from 3 distributors

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10,000 pcs
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4,074 pcs
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STQ1NK60ZR-AP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STQ1NK60ZR-AP Description

Short technical summary and product information.

The STMicroelectronics STQ1NK60ZR-AP is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 300mA at 25°C.

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 15 Ohms at 400mA and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 4.5V at 50µA. The device has a maximum gate charge (Qg) of 6.9 nC at 10V and an input capacitance (Ciss) of 94 pF at 25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is mounted using a through-hole method and comes in a TO-92-3 package (TO-226-3, TO-92-3).

 

The STQ1NK60ZR-AP is specified as RoHS3 compliant, with an MSL of 1 Unlimited and REACH Unaffected status.

STQ1NK60ZR-AP Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STQ1NK60ZR-AP N-Channel MOSFET
Subcategory: N-Channel

STQ1NK60ZR-AP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STQ1NK60ZR-AP Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STQ1NK60ZR-AP Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current of 300mA at 25°C.
  • TO-92-3 through-hole mounting package.
  • RoHS3 compliant status.
  • Wide operating temperature range.

STQ1NK60ZR-AP Applications

  • Suitable for power switching circuits.
  • Used in general purpose electronics.
  • Ideal for low current applications.
  • Component in control systems.

STQ1NK60ZR-AP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

600V.

What package is the STQ1NK60ZR-AP available in?

TO-226-3, TO-92-3 (TO-226AA) through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the maximum gate threshold voltage?

4.5V at 50µA drain current.

What is the maximum on-state resistance?

15 Ohm at 400mA and 10V gate drive.

What is the maximum gate charge?

6.9 nC at 10V gate-source voltage.

What is the maximum input capacitance?

94 pF at 25V drain-source voltage.

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