| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STPSC8TH13TI is a 650V Silicon Carbide (SiC) Schottky diode array from STMicroelectronics, featuring a 1 pair series connection configuration. It offers zero reverse recovery time (0ns) for high-frequency switching applications, with a typical forward voltage of 1.75V at 8A forward current. The device can handle non-repetitive peak surge currents up to 80A at 650V.
Packaged in a through-hole TO-220-3 case with an insulated TO-220AB supplier device package, the diode array operates over a junction temperature range of -40°C to 175°C. The SiC Schottky technology enables high efficiency and low switching losses in power conversion circuits.
This component is suitable for applications requiring fast switching and high voltage capability, such as power factor correction, boost converters, and other high-frequency rectification stages. The series-connected pair configuration provides flexibility for center-tapped or full-wave rectifier designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.79 | $6.79 |
| 10+ | $3.99 | $3.99 |
| 100+ | $3.28 | $3.28 |
| 500+ | $2.92 | $2.92 |
| 1,000+ | $2.61 | $2.61 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The diode array is rated for 650V.
Typical forward voltage is 1.75V at 8A forward current.
Reverse recovery time is 0ns (zero recovery).
Through-hole TO-220-3 package with insulated TO-220AB supplier device package.
Operating temperature range is -40°C to 175°C.
1 pair series connection.
Non-repetitive peak surge current is 80A at 650V.