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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
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| Operating Temperature | |
| Reverse Recovery Time (trr) | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The STPSC8H065G-TR is a 650V, 8A Silicon Carbide (SiC) Schottky diode from STMicroelectronics. It features zero reverse recovery time (0 ns), enabling high-frequency switching with minimal losses. The forward voltage is 1.75 V maximum at 8 A, and the junction capacitance is 414 pF at 0 V and 1 MHz. The device operates over a temperature range of -40°C to 175°C. It is housed in a surface mount D2PAK (TO-263-3) package, suitable for automated assembly. This diode is designed for power conversion applications where efficiency and thermal performance are critical.
The maximum DC reverse voltage (Vr) is 650 V.
The average rectified current (Io) is 8 A.
The maximum forward voltage (Vf) at 8 A is 1.75 V.
The reverse recovery time (trr) is 0 ns, indicating no recovery time.
It comes in a surface mount D2PAK (TO-263-3) package.
The operating temperature range is -40°C to 175°C.
The capacitance is 414 pF at 0 V and 1 MHz.