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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,370 pcs
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9370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STPSC8H065DI is a 650V, 8A Silicon Carbide (SiC) Schottky diode from STMicroelectronics. It offers a maximum forward voltage of 1.75V at 8A and a fast recovery time of ≤500ns. The diode operates over a wide temperature range of -40°C to 175°C.
This through-hole device is packaged in a TO-220AC insulated case, providing easy mounting and thermal management. SiC Schottky technology enables high efficiency and high-temperature operation, making it suitable for power conversion applications such as power factor correction and switch-mode power supplies.
The diode is rated for an average rectified current of 8A and is designed for high-voltage rectification. Its fast switching characteristics reduce switching losses in high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.41 | $4.41 |
| 10+ | $2.26 | $2.26 |
| 100+ | $2.05 | $2.05 |
| 500+ | $1.68 | $1.68 |
| 1,000+ | $1.60 | $1.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The diode has a reverse voltage rating of 650V.
The average rectified current is 8A.
The maximum forward voltage is 1.75V at 8A.
The diode is specified as fast recovery with trr ≤ 500ns at Io > 200mA.
It is available in a TO-220AC insulated through-hole package.
The operating temperature range is -40°C to 175°C.
It uses Silicon Carbide (SiC) Schottky technology.