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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The STPSC8H065BY-TR is a silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. It is rated for a DC reverse voltage of 650 V and an average rectified current of 8 A, with zero reverse recovery time (0 ns) enabling minimal switching losses.
This diode is housed in a surface-mount DPAK (TO-252-3) package and operates over a junction temperature range of -40°C to 175°C. Its junction capacitance is 414 pF at 0 V and 1 MHz. The mounting type is surface mount, suitable for automated assembly.
SiC Schottky technology provides superior switching performance and high-temperature capability compared to conventional silicon diodes. The zero recovery characteristic eliminates reverse recovery losses, making it ideal for high-frequency power conversion applications. The device is listed as RoHS3 compliant, with MSL Level 1 and REACH unaffected status (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $3.99 | $3.99 |
| 10+ | $2.61 | $2.61 |
| 100+ | $1.87 | $1.87 |
| 500+ | $1.56 | $1.56 |
| 1,000+ | $1.50 | $1.50 |
| 2,500+ | $1.33 | $1.33 |
| 5,000+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V DC.
8 A.
0 ns (zero recovery).
TO-252-3 (DPak) surface mount package.
Silicon Carbide (SiC) Schottky.
-40°C to 175°C.
414 pF at 0V, 1MHz.