| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The STPSC8H065B-TR is a silicon carbide (SiC) Schottky diode manufactured by STMicroelectronics. It is rated for a maximum DC reverse voltage of 650V and an average rectified current of 8A. The forward voltage drop is 1.75V at 8A, which contributes to low conduction losses. This diode offers zero reverse recovery time (trr = 0 ns), making it ideal for high-frequency switching applications where fast commutation is required. The junction capacitance is typically 414 pF at 0V and 1MHz. The device operates over a junction temperature range of -40°C to 175°C, providing robust performance in harsh environments. The STPSC8H065B-TR is housed in a surface mount DPAK (TO-252-3) package, suitable for automated assembly processes. This SiC Schottky diode is well suited for applications such as power factor correction, solar inverters, and switch-mode power supplies where efficiency and reliability are paramount.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.65 | $3.65 |
| 10+ | $2.39 | $2.39 |
| 100+ | $1.66 | $1.66 |
| 500+ | $1.35 | $1.35 |
| 1,000+ | $1.33 | $1.33 |
| 2,500+ | $1.11 | $1.11 |
| 5,000+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
8 A.
1.75 V.
0 ns (zero recovery time).
TO-252-3 DPAK (DPak) surface mount package.
SiC (Silicon Carbide) Schottky.
-40°C to 175°C (junction).