| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STPSC6H12B-TR1 is a Silicon Carbide (SiC) Schottky diode, offering superior performance characteristics for demanding applications. This single rectifier diode is rated for 6A of current and a voltage of 1.9V at 6A, with a maximum operating temperature of 175°C.
Key electrical features include a reverse recovery time of 0 ns, indicating no recovery time above 500mA (Io), and a capacitance of 330pF at 0V and 1MHz. The diode is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
With its SiC technology, the STPSC6H12B-TR1 provides enhanced efficiency and reliability compared to traditional silicon diodes. Its robust construction and operating temperature range of -40°C to 175°C make it suitable for various industrial and power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The diode has a current rating of 6A.
The forward voltage is 1.9V at 6A.
The reverse recovery time is 0 ns.
It uses SiC (Silicon Carbide) Schottky technology.
The operating temperature range is -40°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.