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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,020 pcs
|
14020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The STPSC6H065G-TR is a Silicon Carbide (SiC) Schottky diode manufactured by STMicroelectronics. It is rated for a maximum DC reverse voltage of 650V and an average rectified forward current of 6A. The device features a maximum forward voltage of 1.75V at 6A and exhibits zero reverse recovery time (trr = 0 ns), making it suitable for high-frequency switching applications. The junction capacitance is 300pF at 0V and 1MHz. The diode operates over a junction temperature range of -40°C to 175°C. It is housed in a TO-263-3 (D²Pak) surface mount package with supplier device package designation D²PAK. The SiC Schottky technology enables efficient switching with minimal losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.41 | $3.41 |
| 10+ | $2.22 | $2.22 |
| 100+ | $1.54 | $1.54 |
| 500+ | $1.22 | $1.22 |
| 1,000+ | $1.12 | $1.12 |
| 2,000+ | $1.10 | $1.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) is 650 V.
The average rectified forward current (Io) is 6 A.
The maximum forward voltage is 1.75 V at 6 A.
The reverse recovery time (trr) is 0 ns, indicating no recovery time.
It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.
The junction operating temperature range is -40°C to 175°C.
It uses Silicon Carbide (SiC) Schottky technology.