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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The STPSC4H065DLF is a Silicon Carbide (SiC) Schottky diode from STMicroelectronics, designed for high-efficiency power conversion. It offers a maximum DC reverse voltage of 650V and an average rectified current of 4A. The diode exhibits a low forward voltage of 1.55V at 4A and zero reverse recovery time (0 ns), characteristic of SiC Schottky technology, enabling high-frequency operation with minimal switching losses.
This diode is surface-mountable in the 8-PowerVDFN package, with a supplier device package of PowerFlat (8x8) HV. It operates over a temperature range of -40°C to 175°C. The typical junction capacitance is 245 pF at 0V and 1 MHz.
The SiC Schottky technology provides superior performance over conventional silicon diodes in power supply and inverter applications, particularly where high voltage and high frequency are required. The zero reverse recovery eliminates turn-on losses and reduces EMI.
This component is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited). It is suitable for use in power factor correction, switching power supplies, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.25 | $3.25 |
| 10+ | $2.18 | $2.18 |
| 100+ | $1.58 | $1.58 |
| 500+ | $1.28 | $1.28 |
| 1,000+ | $1.22 | $1.22 |
| 3,000+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) is 650V.
The average rectified current (Io) is 4A.
The maximum forward voltage is 1.55V at 4A forward current.
The reverse recovery time is 0 ns (zero recovery), characteristic of SiC Schottky diodes.
It is available in an 8-PowerVDFN surface-mount package, with a supplier device package of PowerFlat (8x8) HV.