| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
235,000 pcs
|
235000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
The STPSC2H065B-TR is a silicon carbide (SiC) Schottky diode from STMicroelectronics, designed for high-efficiency power conversion. It offers a reverse voltage rating of 650V and an average rectified current of 2A, with a typical forward voltage of 1.55V at 2A. The diode features zero reverse recovery time (>500mA Io), enabling high-frequency switching with minimal losses. Junction capacitance is 135pF typical at 0V and 1MHz. The device is housed in a surface-mount DPAK (TO-252-3) package, suitable for automated assembly. Operating temperature ranges from -40°C to 175°C, making it robust for demanding environments. Typical applications include power factor correction, switch-mode power supplies, and electric vehicle charging systems.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.54 | $0.54 |
| 5,000+ | $0.51 | $0.51 |
| 7,500+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
2 A.
1.55 V typical.
It has no reverse recovery time (>500mA Io), meaning zero recovery time for fast switching.
Surface mount DPAK (TO-252-3).
135 pF typical @ 0V, 1MHz.
-40°C to 175°C.