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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Configuration | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The STPSC10TH13TI is a silicon carbide (SiC) Schottky diode array from STMicroelectronics, configured as 1 pair series connection. It is designed for high-efficiency power conversion applications requiring fast switching and low losses.
Key electrical specifications include a forward voltage of 1.75 V at 10 A, zero reverse recovery time (0 ns), and a non-repetitive peak forward surge current rating of 100 A at 650 V. The device operates with a maximum junction temperature of 150°C.
The component is housed in a through-hole TO-220-3 package with an insulated TO-220AB supplier device package, making it suitable for designs requiring high-voltage isolation and robust thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.18 | $6.18 |
| 10+ | $3.63 | $3.63 |
| 100+ | $3.24 | $3.24 |
| 500+ | $2.87 | $2.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The forward voltage is 1.75 V at 10 A.
The reverse recovery time is 0 ns.
It uses a through-hole TO-220-3 package with a TO-220AB insulated supplier device package.
The maximum junction temperature is 150°C.
It is configured as 1 pair series connection.
The non-repetitive peak forward surge current is 100 A at 650 V.
It uses SiC (Silicon Carbide) Schottky technology.