STPSC10TH13TI STPSC10TH13TI is a 650V SiC Schottky diode array from STMicroelectronics with a 1 pair series connection. It features zero reverse recovery time and a forward voltage of 1.75 V at 10 A.
Mfr Part #:

STPSC10TH13TI

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STPSC10TH13TI is a 650V SiC Schottky diode array from STMicroelectronics with a 1 pair series connection. It features zero reverse recovery time and a forward voltage of 1.75 V at 10 A.
Total Stock: 7,520 pcs
$ Price Range: $2.87 - $6.18

STPSC10TH13TI Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request On Request On Request On Request

STPSC10TH13TI Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Configuration
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Speed
Supplier Device Package
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Voltage

STPSC10TH13TI Description

Short technical summary and product information.

The STPSC10TH13TI is a silicon carbide (SiC) Schottky diode array from STMicroelectronics, configured as 1 pair series connection. It is designed for high-efficiency power conversion applications requiring fast switching and low losses.

 

Key electrical specifications include a forward voltage of 1.75 V at 10 A, zero reverse recovery time (0 ns), and a non-repetitive peak forward surge current rating of 100 A at 650 V. The device operates with a maximum junction temperature of 150°C.

 

The component is housed in a through-hole TO-220-3 package with an insulated TO-220AB supplier device package, making it suitable for designs requiring high-voltage isolation and robust thermal management.

STPSC10TH13TI Quick Information

Product Type: SiC Schottky Diode Array
Canonical Name: STPSC10TH13TI — 650V SiC Schottky Diode Array, 1 Pair Series Connection, TO-220AB Insulated
Subcategory: SiC Schottky Diode Array

STPSC10TH13TI Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STPSC10TH13TI Estimated Pricing

Qty Low High
1+ $6.18 $6.18
10+ $3.63 $3.63
100+ $3.24 $3.24
500+ $2.87 $2.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

STPSC10TH13TI Features

  • SiC Schottky diode array with 1 pair series connection.
  • Zero reverse recovery time for high-speed switching.
  • Forward voltage of 1.75 V at 10 A.
  • Non-repetitive peak surge current of 100 A.
  • Through-hole TO-220AB insulated package.

STPSC10TH13TI Applications

  • Suitable for high-efficiency power factor correction circuits.
  • Used in switch-mode power supplies and inverters.
  • Ideal for high-frequency rectification and freewheeling diodes.
  • Applicable in electric vehicle charging infrastructure.
  • Designed for industrial motor drive systems.

STPSC10TH13TI FAQs

7 frequently asked questions generated from this part’s specifications.
What is the forward voltage of the STPSC10TH13TI?

The forward voltage is 1.75 V at 10 A.

What is the reverse recovery time of this diode array?

The reverse recovery time is 0 ns.

What package does the STPSC10TH13TI use?

It uses a through-hole TO-220-3 package with a TO-220AB insulated supplier device package.

What is the maximum junction temperature for this device?

The maximum junction temperature is 150°C.

What is the diode configuration of the STPSC10TH13TI?

It is configured as 1 pair series connection.

What is the non-repetitive peak forward surge current rating?

The non-repetitive peak forward surge current is 100 A at 650 V.

What technology is used in the STPSC10TH13TI?

It uses SiC (Silicon Carbide) Schottky technology.

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