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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,612 pcs
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1612 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Reverse Recovery Time (trr) | |
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| Voltage - Reverse (Vr) |
The STPSC10H12G-TR is a Silicon Carbide (SiC) Schottky diode from STMicroelectronics, designed for high voltage and high frequency rectification applications. It offers a reverse voltage rating of 1200V and an average rectified current of 10A, with a typical forward voltage of 1.5V at 10A.
This diode features zero reverse recovery time (trr = 0 ns), which significantly reduces switching losses and enables efficient operation at high frequencies. The junction capacitance is 725pF at 0V, and the device can operate over a wide temperature range from -40°C to 175°C.
The STPSC10H12G-TR is housed in a surface mount D2PAK package (TO-263-3), which is suitable for automated assembly and space-constrained designs. The package is RoHS compliant and REACH unaffected, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.93 | $5.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse voltage rating is 1200V.
The average rectified current is 10A.
The typical forward voltage is 1.5V at 10A.
The reverse recovery time is 0 ns (zero recovery).
It is available in a TO-263-3 (D2PAK) surface mount package.
It uses Silicon Carbide (SiC) Schottky technology.
The operating temperature range is -40°C to 175°C.