| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STPSC10H065DLF is a Silicon Carbide (SiC) Schottky diode from STMicroelectronics, designed for high-efficiency power conversion applications. Its SiC technology provides zero reverse recovery time (0 ns), enabling minimal switching losses and high-frequency operation.
Key electrical specifications include a maximum repetitive reverse voltage of 650 V, an average rectified current of 10 A, and a typical forward voltage of 1.55 V at 10 A. The junction capacitance is 595 pF at 0 V and 1 MHz, supporting fast switching behavior. The device operates over a wide temperature range from -40°C to 175°C, ensuring robustness in demanding environments.
The STPSC10H065DLF comes in a surface-mount 8-PowerVDFN package (PowerFlat 8x8 HV), which offers compact footprint and excellent thermal performance. It is suitable for power factor correction (PFC), switch-mode power supplies (SMPS), and other high-voltage DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.15 | $5.15 |
| 3,000+ | $1.55 | $1.55 |
| 6,000+ | $1.48 | $1.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
10 A.
1.55 V typical at 10 A.
It has no recovery time (0 ns) due to SiC Schottky technology.
Surface-mount 8-PowerVDFN (PowerFlat 8x8 HV) package.
-40°C to 175°C.