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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STPSC10C065RY is a high-performance Silicon Carbide (SiC) Schottky rectifier diode. It offers a maximum reverse voltage of 650V and an average rectified current of 10A, making it suitable for demanding applications.
Key electrical characteristics include a low reverse leakage current of 100 µA at 650V and a reverse recovery time of 0 ns, contributing to efficient operation. The diode also features a capacitance of 480pF at 0V and 1MHz.
Designed for through-hole mounting, the STPSC10C065RY comes in an I2PAK package (TO-262-3 Long Leads, I²Pak, TO-262AA). It operates within a junction temperature range of -40°C to 175°C. The series is noted as Automotive, AEC-Q101 compliant, indicating suitability for automotive applications.
This rectifier diode is part of the SiC Schottky technology, offering advantages in terms of speed and efficiency compared to traditional silicon diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the STPSC10C065RY is 650V.
The average rectified current (Io) for the STPSC10C065RY is 10A.
The reverse recovery time (trr) for this diode is 0 ns.
The STPSC10C065RY utilizes SiC (Silicon Carbide) Schottky technology.
The STPSC10C065RY is designed for through-hole mounting.
The operating junction temperature range is -40°C to 175°C.