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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STPSC10065DY is a silicon carbide (SiC) Schottky diode from STMicroelectronics, designed for high-efficiency power conversion applications. It utilizes SiC Schottky technology to achieve zero reverse recovery time, enabling high-frequency switching with minimal losses.
Key electrical specifications include a DC reverse voltage rating of 650V and an average rectified current of 10A. Typical forward voltage is 1.45V at 10A forward current, and junction capacitance is 670 pF at 0V bias. The diode operates over a temperature range of -40°C to 175°C.
The device is housed in a through-hole TO-220-2 package (supplier package TO-220AC) with two pins, suitable for straightforward PCB mounting. The package is compatible with standard heatsinking for thermal management.
This SiC Schottky diode is well-suited for high-voltage, high-frequency circuits such as power factor correction, switching power supplies, and solar inverters, where efficiency and fast switching are critical. The zero recovery time eliminates switching losses associated with conventional diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.69 | $3.69 |
| 10+ | $2.03 | $2.03 |
| 100+ | $1.74 | $1.74 |
| 500+ | $1.68 | $1.68 |
| 1,000+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V DC.
10A.
1.45V typical.
0 ns (no recovery time).
TO-220-2 (TO-220AC).
Silicon Carbide (SiC) Schottky diode.
-40°C to 175°C.