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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STPSC10065DLF is a silicon carbide (SiC) Schottky diode from STMicroelectronics, designed for high-efficiency power conversion. It features a maximum reverse voltage of 650V and an average rectified current of 10A, with a typical forward voltage drop of 1.45V at 10A. The diode offers zero reverse recovery time (0 ns), enabling high-frequency operation with minimal switching losses. Junction capacitance is 670 pF at 0V and 1MHz. The device operates over a wide temperature range of -40°C to 175°C, making it suitable for demanding environments.
This SiC Schottky diode is housed in an 8-PowerVDFN surface-mount package, specifically the PowerFlat (8x8) HV variant. The compact package enables efficient thermal management and space-saving board layouts. The zero recovery characteristic eliminates reverse recovery losses, improving efficiency in boost, buck, and flyback converters.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and high-frequency DC-DC converters. The SiC technology provides improved thermal performance and reliability compared to conventional silicon diodes.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.71 | $4.71 |
| 10+ | $3.11 | $3.11 |
| 100+ | $2.20 | $2.20 |
| 500+ | $1.81 | $1.81 |
| 1,000+ | $1.68 | $1.68 |
| 3,000+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V (from product title).
1.45V typical at 10A.
0 ns (zero recovery time Schottky diode).
-40°C to 175°C.
8-PowerVDFN (PowerFlat 8x8 HV).
670 pF at 0V, 1MHz.
10A.