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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 728 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IB = 0, IC = 1 mA) | |
| Breakdown Voltage (Minimum @ IC = 0; IE = 100 µA) | |
| Breakdown Voltage (Minimum @ IE = 0, IC = 100 µA) | |
| Collector Current | |
| Collector Peak Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Max Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance (Junction-Ambient) | |
| Total Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STPSA42 is an NPN bipolar junction transistor manufactured by STMicroelectronics. It features a collector-emitter breakdown voltage of 300V minimum and a continuous collector current rating of 0.5A. The device can handle peak currents up to 0.6A for pulses less than 5ms. Power dissipation is rated at 625mW at a case temperature of 25°C.
Thermal characteristics include a maximum operating junction temperature of 150°C and a storage temperature range of -65°C to 150°C. The thermal resistance from junction to ambient is 200°C/W, and from junction to case is also specified in the datasheet.
The transistor is housed in a TO-92-3 through-hole package, suitable for general purpose switching and amplification in low-power circuits. It is commonly used in driver stages, signal amplification, and low-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) is 300V minimum.
The continuous collector current (IC) is 0.5A maximum.
The total power dissipation (Ptot) is 625mW maximum at case temperature 25°C.
The package type is TO-92-3 (3-lead through-hole).
The maximum operating junction temperature is 150°C.
The storage temperature range is -65°C to 150°C.
The thermal resistance junction-to-ambient (Rthj-amb) is 200°C/W maximum.