| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,983 pcs
|
2983 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP9NM60N from STMicroelectronics, offers a robust solution for power switching applications. It features a high drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of up to 6.5A at a case temperature (Tc).
The MOSFET has a maximum power dissipation of 70W (Tc) and a low on-resistance (Rds On) of 745mOhm at 3.25A and 10V gate-source voltage. Key electrical parameters include input capacitance (Ciss) of 452pF at 50V and gate charge (Qg) of 17.4nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±25V.
Designed for through-hole mounting, the STP9NM60N utilizes the TO-220-3 package. It operates at a maximum junction temperature (TJ) of 150°C. This component is suitable for various power electronics designs requiring reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
6.5A.
745mOhm maximum at 3.25A and 10V gate drive.
4V maximum at 250µA drain current.
17.4nC maximum at 10V.
Maximum 150°C.
Through-hole TO-220-3 (TO-220) package.