| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,550 pcs
|
2550 pcs | On Request | 1 | On Request | On Request | 734 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP9NM50N is a second-generation MDmesh™ Power MOSFET from STMicroelectronics, featuring an N-channel configuration. This device is designed for high efficiency converters and demanding switching applications.
Key electrical specifications include a 500V drain-source voltage (VDSS) and a maximum continuous drain current of 5A at 25°C case temperature, with a pulsed drain current capability of 30A. The on-resistance (Rds On) is a maximum of 560mOhm at 3.7A and 10V gate-source voltage. Input capacitance (Ciss) is 570pF at 50V, and gate charge (Qg) is 20nC at 10V.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 70W at 25°C case temperature. It is housed in a TO-220 package and supports through-hole mounting.
The device is characterized by low input capacitance and low gate charge, making it suitable for applications requiring high efficiency. The technology employed is MOSFET (Metal Oxide), and it is rated for a gate-source voltage of ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
4V at 250µA.
560mOhm maximum at 3.7A, 10V.
5A at case temperature 25°C.