| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,400 pcs
|
5400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
870 pcs
|
870 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP9NK60ZFP is a single N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for robust performance in power applications, offering a high drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 950mOhm at 3.5A and 10V gate drive, a gate threshold voltage (Vgs(th)) of 4.5V at 100µA, and a maximum gate-to-source voltage (Vgs) of ±30V. The component also features input capacitance (Ciss) of 1110 pF at 25V and gate charge (Qg) of 53 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 30W (Tc). It is packaged in a TO-220FP configuration and is designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are based on precomputed fields with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
The STP9NK60ZFP is available in a TO-220-3 Full Pack (TO-220FP) through-hole package.
-55°C to 150°C (junction temperature).
950mOhm at Vgs=10V, Id=3.5A.
53 nC maximum at Vgs=10V.
7A at case temperature (Tc).
30W at case temperature.