| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,850 pcs
|
1850 pcs | On Request | 1 | On Request | On Request | 1323+ | On Request | On Request | |
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP9NK50Z is a power MOSFET manufactured by STMicroelectronics. This N-Channel device is designed for applications requiring a high breakdown voltage of 500V and a continuous drain current of up to 7.2A.
Key electrical characteristics include a low on-state resistance (Rds On) of 850mOhm at 3.6A and 10V gate-source voltage. The device has a gate charge (Qg) of 32nC and an input capacitance (Ciss) of 910pF. The gate-source threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA, and the maximum gate-source voltage is ±30V.
With a maximum power dissipation of 110W at the case temperature, the STP9NK50Z is suitable for various power switching applications. It operates within a temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-220-3 package, designed for through-hole mounting. The standard packaging is a tube.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 500V.
The package is TO-220 (TO-220-3) with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The maximum Rds(on) is 850mOhm at 3.6A and 10V gate drive.
The maximum gate charge at 10V is 32 nC.
The maximum input capacitance at 25V is 910 pF.
The maximum power dissipation at case temperature is 110W.