| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP9N65M2 is an N-Channel MOSFET belonging to the discrete semiconductor products category. This component is designed for power switching applications, offering a high drain-source voltage of 650V and a continuous drain current of 5A at a case temperature.
Key electrical characteristics include a maximum Rds On of 900mOhm at 2.5A and 10V gate-source voltage, an input capacitance (Ciss) of 315 pF at 100V, and a gate charge (Qg) of 10 nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-source voltage is ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). It is housed in a TO-220-3 package and utilizes through-hole mounting.
The STP9N65M2 is RoHS3 compliant, has an MSL rating of 1 Unlimited, and is REACH unaffected. Its robust specifications make it suitable for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The maximum continuous drain current is 5A at case temperature (Tc).
The maximum on-resistance (Rds On) is 900mOhm at a drain current of 2.5A and gate-source voltage of 10V.
It is available in a TO-220-3 through-hole package.
The maximum operating junction temperature (TJ) is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.
This is an N-Channel MOSFET.