| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP9N60M2 is a robust N-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 600V and can handle a continuous drain current of 5.5A.
Key electrical characteristics include a maximum gate-source voltage of ±25V and a gate threshold voltage of 4V at 250µA. The MOSFET features a low on-resistance of 780mOhm at 3A and 10V, with a maximum input capacitance of 320pF at 100V. The maximum gate charge is 10nC at 10V.
This device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The STP9N60M2 is supplied in a TO-220-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600 V.
The continuous drain current is 5.5A (Tc).
The operating temperature is 150°C (TJ).
It is supplied in a TO-220-3 package.
It is designed for through-hole mounting.