| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46 pcs
|
46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The STP95N4F3 is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics' STripFET™ III technology. This technology is designed to minimize on-resistance and gate charge for superior switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum continuous drain current of 80A at 25°C. The static drain-source on-resistance is as low as 5.8 mΩ at a gate-source voltage of 10V and a drain current of 40A.
This device is available in D2PAK, DPAK, and TO-220 packages, suitable for various mounting requirements. It is designed for switching applications, particularly in the automotive sector.
Features include standard threshold drive and 100% avalanche tested, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current at 25°C is 80A.
The typical static drain-source on-resistance is 5.0 mΩ at VGS = 10V and ID = 40A.
The STP95N4F3 is available in D2PAK, DPAK, and TO-220 packages.
The operating junction temperature range is -55°C to 175°C.
