| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
298 pcs
|
298 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP8NS25 is a single N-channel power MOSFET manufactured by STMicroelectronics. This device is designed for general-purpose switching and amplification applications requiring a maximum drain-to-source voltage of 250V and a continuous drain current of 8A.
The STP8NS25 is housed in a TO220AB through-hole package, which provides efficient thermal management and is suitable for a wide range of power conversion and motor control circuits. The 250V breakdown voltage makes it appropriate for use in AC-DC converters, power supplies, and other circuits operating from rectified mains voltages.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 250V.