| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,247 pcs
|
3247 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP8NM60N is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for high voltage applications with a Drain to Source Voltage (Vdss) of 600V. It features a maximum continuous drain current of 7A (Tc) and a maximum power dissipation of 70W (Tc).
The MOSFET has a gate threshold voltage (Vgs(th)) of 4V at 250µA and a gate-to-source voltage (Vgs) range of ±25V. The input capacitance (Ciss) is 560 pF at 50V, and the gate charge (Qg) is 19 nC at 10V. The on-resistance (Rds On) is a maximum of 650mOhm at 3.5A and 10V.
This device operates within a temperature range of -55°C to 150°C (TJ). It is mounted via a through-hole method and comes in a TO-220-3 package. The STP8NM60N utilizes MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The STP8NM60N comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 7A at case temperature.
The maximum gate charge is 19 nC at 10V gate-source voltage.
The maximum on-resistance is 650 mOhm at 3.5A drain current and 10V gate drive.