| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP8NM60 is a single N-Channel MOSFET belonging to the MOSFET technology family. It is designed for through-hole mounting and comes in a TO-220 package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 8A at a case temperature (Tc). The Rds On is a maximum of 1 Ohm at 2.5A and 10V gate-source voltage, with a gate charge (Qg) of 18 nC at 10V. Input capacitance (Ciss) is rated at 400 pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 100W (Tc). The gate source voltage (Vgs) maximum is ±30V, and the gate threshold voltage (Vgs(th)) is 5V at 250µA.
Compliance information indicates RoHS3 compliance and an MSL rating of 1. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
8A at case temperature.
TO-220-3 (through-hole).
-55°C to 150°C junction temperature.
100W at case temperature.
18 nC at 10V gate-source voltage.