| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP8NM50N is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for applications requiring a high breakdown voltage of 500V.
Key electrical characteristics include a continuous drain current of 5A (Tc) and a maximum on-resistance of 790mOhm at 2.5A and 10V gate-source voltage. The gate charge (Qg) is 14nC at 10V, and the input capacitance (Ciss) is 364pF at 50V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a gate-to-source voltage (Vgs) rating of ±25V. The threshold voltage (Vgs(th)) is 4V at 250µA.
The component is housed in a TO-220-3 package and is designed for through-hole mounting. Its power dissipation is rated at 45W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
150°C (TJ).
TO-220-3 (TO-220).
790mOhm maximum at Vgs=10V and Id=2.5A.
5A at case temperature.
4V maximum at 250µA.
14nC maximum at Vgs=10V.