| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,700 pcs
|
3700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP8NK80ZFP is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for applications requiring a high breakdown voltage of 800V and can handle a continuous drain current of 6.2A at case temperature.
Key electrical characteristics include a maximum Rds On of 1.5 Ohm at 3.1A and 10V, a gate charge (Qg) of 46 nC at 10V, and an input capacitance (Ciss) of 1320 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA, and the maximum gate-source voltage is ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting. The technology used is MOSFET (Metal Oxide).
The STP8NK80ZFP is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-source voltage is 800V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C (junction temperature).
Maximum on-resistance is 1.5 Ohm at 3.1A and 10V gate-source voltage.
Maximum gate threshold voltage is 4.5V at 100µA drain current.
Maximum input capacitance is 1320pF at 25V drain-source voltage.