| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
151,020 pcs
|
151020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,577 pcs
|
1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP8NK80Z is a single N-Channel MOSFET designed for power applications. It offers a high drain-source voltage (Vdss) of 800V and can handle a continuous drain current of 6.2A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.5 Ohms at 3.1A and 10V Vgs, and a gate charge (Qg) of 46 nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is packaged in a TO-220-3 configuration and utilizes through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching capabilities.
The STP8NK80Z is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 800V.
The continuous drain current is 6.2A at case temperature.
The maximum on-resistance is 1.5 Ohms at a drain current of 3.1A and gate voltage of 10V.
The STP8NK80Z is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate-source voltage is ±30V.
The maximum gate threshold voltage is 4.5V at a drain current of 100 microamps.