| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP8N90K5 is a single N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for power switching applications requiring high voltage capabilities.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 8A at 25°C. The gate-source voltage (Vgs) has a maximum rating of ±30V, with a gate threshold voltage (Vgs(th)) of 5V at 100µA. The drive voltage is rated at 10V. The device offers a maximum power dissipation of 130W (Tc).
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 package and utilizes a through-hole mounting type, making it suitable for various circuit designs.
The STP8N90K5 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
8A at 25°C case temperature.
130W.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package.
5V maximum at 100µA drain current.
N-Channel MOSFET.