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STP8N120K5 The STP8N120K5 is an N-channel MOSFET from STMicroelectronics with a 1200V breakdown voltage and 6A continuous drain current. It is housed in a TO-220 package.
Mfr Part #:

STP8N120K5

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP8N120K5 is an N-channel MOSFET from STMicroelectronics with a 1200V breakdown voltage and 6A continuous drain current. It is housed in a TO-220 package.
✓ Total Stock: 39,684 pcs
$ Price Range: $2.56

STP8N120K5 Available from 5 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
24,000 pcs
On Request
24000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Eito Shoji ✓
Non-Authorised Inventory information
7,464 pcs
On Request
7464 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
4,600 pcs
On Request
4600 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,020 pcs
On Request
2020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STP8N120K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Product Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STP8N120K5 Description

Short technical summary and product information.

The STP8N120K5 is an N-channel MOSFET manufactured by STMicroelectronics, designed for power applications. It features a high drain-source breakdown voltage of 1200V and a continuous drain current rating of 6A.

 

Key electrical characteristics include a maximum on-resistance of 2 Ohms at 2.5A and 10V, and a gate-source threshold voltage of 5V at 100µA. The MOSFET operates with a gate-source voltage of up to ±30V and has a typical gate charge of 13.7 nC at 10V.

 

This device utilizes MOSFET (Metal Oxide) technology and is configured as a single N-channel enhancement mode transistor. It has a maximum power dissipation of 130W (Tc) and an operating temperature range of -55°C to 150°C.

 

The STP8N120K5 is supplied in a TO-220 package, suitable for through-hole mounting. The typical turn-on delay time is 15.5 ns, and the typical turn-off delay time is 40 ns, with rise and fall times of 11 ns and 27 ns respectively. The factory pack quantity is 1000 units.

STP8N120K5 Quick Information

Product Type: MOSFET
Series: MDmesh K5
Canonical Name: STP8N120K5 N-Channel MOSFET
Subcategory: MOSFETs

STP8N120K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP8N120K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP8N120K5 Features

  • 1200V drain-source breakdown voltage.
  • 6A continuous drain current.
  • TO-220 package for through-hole mounting.
  • N-channel enhancement mode MOSFET.
  • Wide operating temperature range.

STP8N120K5 Applications

  • Ideal for high voltage power supplies.
  • Suitable for motor control circuits.
  • Used in power factor correction.
  • Applicable in lighting ballasts.

STP8N120K5 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STP8N120K5?

The drain-source breakdown voltage is 1200 V.

What is the continuous drain current for the STP8N120K5?

The continuous drain current is 6 A.

What is the maximum power dissipation of the STP8N120K5?

The maximum power dissipation is 130 W.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the STP8N120K5 supplied in?

The STP8N120K5 is supplied in a TO-220-3 package.

Is the STP8N120K5 RoHS compliant?

Yes, the STP8N120K5 is RoHS3 Compliant.

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