| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,512 pcs
|
4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | 0751 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP80PF55 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 55V and can handle a continuous current of 80A at the case temperature.
Key electrical characteristics include a low on-resistance of 18mOhm at 40A and 10V, a gate charge of 258nC at 10V, and a gate threshold voltage of 4V at 250µA. The MOSFET operates within a temperature range of -55°C to 175°C (TJ).
This component is housed in a TO-220 package and utilizes through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.
The STP80PF55 is suitable for various power switching and control applications where a robust P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 55V.
The continuous drain current is 80A.
The Rds On is a maximum of 18mOhm at 40A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
The STP80PF55 is in a TO-220-3 package.
The STP80PF55 is mounted through hole.