| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP80NF70 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications and features a drain-source voltage (Vdss) of 68V and a continuous drain current of 98A at a case temperature (Tc).
Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum on-resistance (Rds On) of 9.8mOhm at 40A and 10V gate-source voltage. The input capacitance (Ciss) is 2550 pF at 25V, and the gate charge (Qg) is 75 nC at 10V.
With a maximum power dissipation of 190W (Tc), this MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-220-3 package and utilizes through-hole mounting.
The STP80NF70 is built using MOSFET (Metal Oxide) technology. It is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
68V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
98A at case temperature.
9.8mOhm maximum at 40A and 10V gate-source voltage.
4V maximum at 250µA drain current.
2550 pF at 25V drain-source voltage.