| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP80NF55L-06 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. Designed for demanding applications, it features a maximum drain-source voltage (Vdss) of 55V and a continuous drain current of 80A.
Key electrical characteristics include a low on-resistance (Rds On) of 6.5mOhm at 40A and 10V gate drive, and a gate charge (Qg) of 136nC. The MOSFET operates within a temperature range of -55°C to 175°C (TJ).
This component is housed in a standard TO-220-3 package and utilizes through-hole mounting. Its robust design makes it suitable for various power switching and control applications where reliability and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 55V.
The maximum continuous drain current is 80A at a case temperature of 25°C.
The maximum on-resistance is 6.5mOhm at 40A drain current and 10V gate-source voltage.
It comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum power dissipation is 300W at a case temperature of 25°C.