| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,100 pcs
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7100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STP80NF55-08 is a high-performance N-Channel power MOSFET designed and manufactured by STMicroelectronics. It features a drain-source breakdown voltage of 55V and a continuous drain current of 80A at the case temperature, making it suitable for medium-voltage power switching applications. The device offers a low maximum on-resistance of 8 milliohms at 40A drain current and 10V gate drive, which helps minimize conduction losses.
Gate charge is specified at 155 nC maximum at 10V, and input capacitance is 3850 pF at 25V. Switching characteristics include typical turn-on delay of 25 ns, rise time of 85 ns, turn-off delay of 70 ns, and fall time of 25 ns. Maximum power dissipation is 300W at the case temperature. The device can operate over a junction temperature range of -55°C to 175°C.
The STP80NF55-08 is housed in a TO-220-3 through-hole package, which is well suited for heatsink mounting in power circuits. Standard packaging is a tube with a factory pack quantity of 50 units. This MOSFET is intended for use in power conversion, motor control, and automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP80NF55-08 comes in a TO-220-3 through-hole package.
-55°C to 175°C (junction temperature).
55V drain-source breakdown voltage.
80A at case temperature (Tc).
8mOhm maximum at 40A drain current and 10V gate-source voltage.
Maximum gate charge is 155nC at 10V gate-source voltage.
Typical turn-on delay 25ns, rise time 85ns, turn-off delay 70ns, fall time 25ns.