STP80NF55-06 The STMicroelectronics STP80NF55-06 is an N-Channel MOSFET designed for power applications. It offers a 55V drain-source voltage and 80A continuous current.
Mfr Part #:

STP80NF55-06

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STP80NF55-06 is an N-Channel MOSFET designed for power applications. It offers a 55V drain-source voltage and 80A continuous current.
✓ Total Stock: 12,870 pcs
$ Price Range: $2.56

STP80NF55-06 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,850 pcs
2850 pcs On Request 1 On Request On Request On Request On Request On Request

STP80NF55-06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP80NF55-06 Description

Short technical summary and product information.

The STMicroelectronics STP80NF55-06 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for applications requiring high current handling and low on-resistance.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Tc) of 80A. The on-resistance (Rds On) is a maximum of 6.5mOhm at 40A and 10V gate drive. Gate charge (Qg) is 189 nC maximum at 10V, and input capacitance (Ciss) is 4400 pF maximum at 25V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 300W (Tc). The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate-to-source voltage (Vgs) is ±20V.

 

The STP80NF55-06 is housed in a TO-220-3 package and features a through-hole mounting type.

STP80NF55-06 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STP80NF55-06 N-Channel MOSFET
Subcategory: N-Channel

STP80NF55-06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP80NF55-06 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP80NF55-06 Features

  • N-Channel MOSFET with 55V drain-source voltage.
  • 80A continuous drain current capability.
  • Low 6.5mOhm maximum on-resistance.
  • Wide -55°C to 175°C operating temperature.
  • TO-220 package with through-hole mounting.

STP80NF55-06 Applications

  • Power supply switching applications.
  • Motor control circuits.
  • High current switching tasks.
  • Automotive power management.

STP80NF55-06 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STP80NF55-06?

The maximum drain-source voltage (Vdss) is 55V.

What is the continuous drain current of the STP80NF55-06?

The continuous drain current is 80A at the case temperature (Tc).

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 6.5mOhm when measured at 40A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the STP80NF55-06 supplied in?

It is supplied in a TO-220-3 package.

How is the STP80NF55-06 mounted?

It is mounted using the through-hole method.

Home
Account

Categories